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Explore our comprehensive collection of news articles, technical papers, and patent innovations that showcase SEMICAPS' leadership in semiconductor analysis technology and industry expertise.
Technical Papers Research Publications & Technical Documents
Effects of forward gate bias stressing on the leakage current of AlGaN/GaN high electron mobility transistors
A study of clustering for the enhancement of image resolution in dynamic photon emission
Characterization of 1122nm Laser for Laser Based Fault Isolation Applications
A Demonstration on the Effectiveness of Wafer-level Thermal Microscopy as A Complementary Tool to Photon Emission Microscopy Using MBIST Failure Debug
Descrambling of Embedded SRAM Using a Laser Probe
Failure Analysis of Damages on Advanced Technologies Induced by Picosecond Pulsed Laser During Space Radiation SEE Testing
VLSI for Space Applications: Single Event Effect Investigation and Optical Analysis on an Integrated Laser Platform
Static fault localization of subtle metallization defects using near infrared photon emission microscopy
Failure analysis methodology on donut pattern failure due to photovoltaic electrochemical effect
Static fault localization on Memory failures using Photon Emission Microscopy
Crossing the Resolution Limit in Near-Infrared Imaging of Silicon Chips: Targeting 10-nm Node Technology
Combined Thermography and Luminescence Imaging to Characterize the Spatial Performance of Multicrystalline Si Wafer Solar Cells
Failure Analysis Methodology on Resistive Open Defects
On die logic analysis through the backside
Wafer-level fault isolation approach to debug integrated circuits JTAG failures
Usage of Laser Timing Probe for Sensing of Programmed Charges in EEPROM Devices
Non-Invasive Recognition of Poorly Resolved Integrated Circuit Elements
Imaging using cylindrical vector beams in a high-numerical-aperture microscopy system
A non destructive scan diagnosis based fault isolation technique verification method using infrared laser stimulation on wafer level
A complete and computationally efficient numerical model of aplanatic solid immersion lens scanning microscope
Detection of DR violations in ASIC components using photon emission techniques
Through silicon in-circuit logic analysis for localizing logic pattern failures
Complete modeling of subsurface microscopy system based on aplanatic solid immersion lens
Effectiveness of frequency mapping on 28 nm device broken scan chain failures
Characterization of MOS Transistors Using Dynamic Backside Reflectance Modulation Technique
Negative backside thermoreflectance modulation of microscale metal interconnects
Thermal analysis of backside metallization defects using static and dynamic backside laser reflectance modulation techniques
Laser timing probe with frequency mapping for locating signal maxima
A Novel Method to Realize Soft Defect Localization Techniques without a Synchronization Signal for Failure Analysis
Applications of scanning near-field photon emission microscopy
Design considerations for refractive solid immersion lens: Application to subsurface integrated circuit fault localization using laser induced techniques
Combining refractive solid immersion lens and pulsed laser induced techniques for effective defect localization on microprocessors
Gate oxide integrity failure caused by molybdenum contamination introduced in the ion implantation
Switching and filamentary conduction in non-volatile organic memories
Enhanced detection sensitivity with pulsed laser digital signal integration algorithm
DC-Coupled Laser Induced Detection System for Fault Localization in Microelectronic Failure Analysis
Scanning Optical Microscopy Application in Micron® Memory Devices
Laser beam induced dielectric cracks in VLSI devices
A review of laser induced techniques for microelectronic failure analysis
Soft defect localization (SDL) in integrated circuits using laser scanning microscopy
Patents Intellectual Property & Technical Innovations
At-Speed Integrated Circuit Testing Using Through Silicon In-Circuit Logic Analysis
Method and System for Measuring Laser Induced Phenomena Changes in a Semiconductor Device
Method and System for Measuring Laser Induced Phenomena Changes in a Semiconductor Device
News & Articles Industry Insights & Company Updates
SEMICAPS PTE LTD and Hamamatsu have settled their patent lawsuit in California. Hamamatsu has been granted a fully paid-up license by SEMICAPS for U.S Patent No. 7,623,982. All legal action havebeen terminated with prejudice.
In response to the Inter Partes Review filings (IPR2017-02110 and IPR2017-02112) by Hamamatsu against SEMICAPS’ US Patent 7,623,982, the Patent Trial and Appeals Board (PTAB) of the United States has issued a Final Written Decision ruling that all claims of US Patent 7,623,982 "have not been proven to be unpatentable" on 18th March 2019. Hamamatsu appealed against this decision to the United States Court of Appeals for the Federal Circuit. Subsequently on 15 June 2020, the Federal Appeals Court ruled against Hamamatsu affirming the PTAB decision.
On 23rd April 2020, Judge Donna Ryu issued a Claim Construction Order on the construction (i.e. definition) of 3 terms in the US Patent 7,623,982. She agreed with SEMICAPS that the 3 terms, “value”, “another value” and “test result” require no construction and should be given their plain and ordinary meanings.
Judge Donna M Ryu of the Northern California District Court has issued an Order on 16th August 2019 denying Hamamatsu's motion to summarily dismiss SEMICAPS' patent lawsuit against Hamamatsu.
In the latest development of the patent infringement allegations by SEMICAPS against Hamamatsu, Judge Donna M Ryu has issued an Order on 16th August 2019 denying Hamamatsu's motion to summarily dismiss the case. The court held a hearing on the matter on 11th July 2019.
In response to a patent infringement complaint filed by SEMICAPS against Hamamatsu in 2017, the defendant filed two IPRs against the patent US Patent No. 7,623,982 B2. The PTAB instituted and heard oral arguments for the case on 3rd December 2018.
In December 2017, SEMICAPS responded to Hamamatsu’s Inter Partes Review filings (IPR2017-02110 and IPR2017-02112) against claims of our US Patent 7,623,982 B2. SEMICAPS has filed a lawsuit in the Northern District of California alleging infringement of this patent in June 2017.
The patent infringement lawsuit filed by SEMICAPS against Hamamatsu in California has been held in abeyance pending an inter partes review (IPR) filed by Hamamatsu against US Patent 7,623,982. The IPR was filed with the USPTO in September 2017.
SEMICAPS Pte Ltd, a wholly owned subsidiary of SEMICAPS Corporation Pte Ltd has filed a patent infringement lawsuit against Hamamatsu Corporation and Hamamatsu Photonics KK. The court complaint was submitted on 14th June 2017 in the Northern District of California, USA.
SEMICAPS, a technology spin-off company from the National University of Singapore held a dinner at the Suntec International Convention & Exhibition Centre on 1st July 2014 to celebrate its 25th Anniversary.
SEMICAPS Pte Ltd hosted and sponsored a half-day Failure Analysis (FA) Technical Forum at Suntec Convention and Exhibition Centre, Singapore.
SEMICAPS Pte Ltd hosted and sponsored a half-day Failure Analysis (FA) Technical Forum and Dinner at Orchard Parade Hotel, Singapore