Product – Techniques
Laser Timing Probe (LTP)
An instrument which allows the waveform at a selected point inside a semiconductor device or IC to be measured without a physical probe, by using a laser
Non-invasive backside detection of waveforms/logic within a die using a CW laser
FFT Frequency Mapping to quickly trace signal paths inside a die
Best-in-class
Resolution with Centric and Aplanatic RSILs
Bandwidth up to 12 GHz
Test loop lengths up to 1000 ms
Measure rise times < 40 ps
Optional:
SOM with 1064 nm and 1340 nm lasers
PEM with ultra low-noise InGaAs camera (LN2 or TE-cooled)
Device Thermal Control
The SEMICAPS Laser Timing Probe (LTP) uses a laser to contactlessly probe for waveforms in the internal gates of an integrated circuit (IC). The design-debug technique enables the engineer to locate points within the die where the waveform begin to become defective. The equipment can also measure waveform timings and delays to ensure that these are within the IC design specifications.
Photon Emission Microscopy
A highly sensitive passive fault localization system for the localization of integrated circuit defects using a panchromatic imaging and spectroscopy
Multi Detectors (InGaAs, Extended InGaAs Cooled-CCD), various array sizes (1k x 1k, 640 x 512, 320 x 256) with cooling options – low noise LN2 or TE cooled (Peltier)
Emissions Spectrum coverage from visible light to 2100 nm
Dedicated macro lens for high emission sensitivity
Modular platform – field upgradeable to SOM and LTP
Flexible and customizable
Refractive Solid Immersion lens (RSIL) options
Main applications for the Photon Emission Microscope is to locate failures like leaky junctions, contact spiking (due to ESD), latch-up, oxide breakdown, and other current leakage phenomena that produce light emissions.
Scanning Optical Microscopy
A multi-laser scanning optical microscope system for the active localization of integrated circuit defects by using static power alteration and dynamic tester-based techniques
Lasers option – 1340 nm/ 1320 nm / 1064 nm with laser scan array size up to 2k x 2k
Multiple techniques available
static: TIVA, OBIRCH
dynamic: LADA, SDL
High power delivery >30 mW at DUT for all objectives including 100x
Laser Pulsing technique: 10x improvement in sentivity
Pixel by pixel flexible scanning mode with user defined multiple – AOI
Modular platform, field-upgradeable to LTP option
Flexible and customizable
Refractive Solid Immersion Lens (RSIL) options
Option to mount PEM cameras (InGaAs, TE-Cooled, LN2)
The instrument is an integrated compucentric system designed for maximum ease of use and flexibility. It is optimized for high laser power delivery, sensitivity and spatial resolution
Thermal Microscopy
Thermographic capturing system can pinpoint MWIR emissions within a semiconductor device. It can locates thermal hotspots arising from a variety of defects. It can be integrated into any of the SEMICAPS housing configuration and installed together with the Laser Scanning Microscope (SOM) and a CCD navigation camera on the same platform
Analytical or tester-docked, upright or inverted configurations
High resolution stirling-cooled MCT detector
3 positions angled objective turret
Navigation CCD for high resolution background overlay
Automated detector parcentering
Room temperature imaging
Incorporate into combine microscope
Par-focus
Lock-in thermography option
Montage option