SCOBIC Image
The single contact optical beam induced current (SCOBIC) technique
overcomes the limitation of OBIC which requires contacts to both
sides of the junction for imaging and characterization. SCOBIC
needs only one contact, usually the substrate, to image and
characterize all the junctions that are connected directly or
indirectly to the contact
TBIP Image
The patented TBIP technique overcomes the limitations of
conventional laser induced techniques using TIVA and OBIRCH by
introducing an inductor to achieve voltage bias and voltage
detection. Dwell time control together with pulsing and lock-in
detection result in better localization accuracy and higher
sensitivity
SDL Image
The Soft Defect Localization (SDL) technique uses the tester as a
detector of laser induced effects. At each pixel location, the
tester is programmed to run relevant portion of the test
program for a specified number of cycles. The pass-fail data
is then used to construct the SDL image for fault localization
DReM Image
The Differential Resistance Monitor (DReM) is a patented dc
coupled amplifier which provides voltage bias and voltage detection.
This amplifier provides higher sensitivity and reduces the
distortions in the images from conventional ac coupled amplifier.